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BLF6G10LS-200RN 200W LDMOS RF power transistor for base station applications from 700MHz to 1GHz. Features 20dB gain and 28.5% efficiency.
Mfr Part #:

BLF6G10LS-200RN

Available from 1 distributors
Mfr Name: Ampleon
Ampleon
200W LDMOS RF power transistor for base station applications from 700MHz to 1GHz. Features 20dB gain and 28.5% efficiency.
✓ Total Stock: 10,240 pcs

BLF6G10LS-200RN Available from 1 distributor

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✓ Non-Authorised
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Components Technology Group, Inc. ✓
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10,240 pcs
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10240 pcs On Request 1 On Request On Request On Request On Request On Request
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BLF6G10LS-200RN Specifications Quick View

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BLF6G10LS-200RN Description

Short technical summary and product information.

The BLF6G10LS-200RN is a 200W LDMOS power transistor from Ampleon, designed for RF power amplifier applications in base stations operating from 700MHz to 1000MHz. This device is internally matched for ease of use and integrates ESD protection for enhanced reliability.

 

Key electrical specifications include a drain-source voltage of 65V, a drain current of 49A, and a quiescent current of 1400mA. Typical 2-carrier W-CDMA performance at 28V supply delivers 40W average output power with 20dB gain, 28.5% efficiency, and ACPR of -39dBc. The transistor is also tested for 3GPP signals with PAR of 7.5dB.

 

The device is housed in a SOT-502B package with chassis mount configuration, suitable for heatsinking. It is RoHS3 compliant. The junction temperature rating is 225°C, with storage temperature range from -65°C to +150°C. Applications include GSM, GSM EDGE, W-CDMA, CDMA, and multicarrier amplifiers in the 700MHz to 1000MHz band.

BLF6G10LS-200RN Quick Information

Product Type: RF Power Transistor
Series: BLF6G10
Canonical Name: BLF6G10LS-200RN Power LDMOS Transistor
Subcategory: RF Power Transistors

BLF6G10LS-200RN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF6G10LS-200RN Features

  • Integrated ESD protection for enhanced reliability.
  • Designed for broadband operation from 700MHz to 1GHz.
  • Internally matched for ease of use.
  • High efficiency of 28.5% at 40W average output.
  • Excellent thermal stability with 225°C junction temperature.

BLF6G10LS-200RN Applications

  • Ideal for GSM and W-CDMA base station amplifiers.
  • Used in multicarrier CDMA applications.
  • Suitable for RF power amplifiers in 700MHz-1GHz band.
  • Designed for class-AB operation.

BLF6G10LS-200RN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the BLF6G10LS-200RN?

The drain-source voltage (Vds) is 65V, and the gate-source voltage (Vgs) ranges from -0.5V to +13V.

What is the package type of this transistor?

The package is SOT-502B, with chassis mount configuration.

Is the BLF6G10LS-200RN RoHS compliant?

Yes, it is RoHS3 compliant per Directive 2002/95/EC.

What frequency range does the BLF6G10LS-200RN support?

It operates from 700MHz to 1GHz.

What is the output power of the BLF6G10LS-200RN?

The maximum output power is 200W.

What is the gain of this LDMOS transistor?

The typical power gain is 20dB at 28V supply.

What is the efficiency of the BLF6G10LS-200RN?

The drain efficiency is 28.5% at 40W average output power (2-carrier W-CDMA test).

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