| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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61 pcs
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61 pcs | On Request | 1 | On Request | On Request | 0921+ | On Request | On Request |
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The NXP Semiconductors BLF6G10LS-160RN is a high-performance RF Power LDMOS Transistor designed for demanding applications. This component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for a wide range of environmental conditions.
As an RF power transistor, the BLF6G10LS-160RN is engineered for efficient power amplification at high frequencies. Its specific electrical characteristics, such as operating voltage, power output, and gain, are critical for applications in telecommunications, broadcasting, and radar systems. The LDMOS technology employed offers advantages in linearity and ruggedness.
While detailed specifications for operating voltage, frequency range, and power dissipation are not provided in the current data, the component's classification as an RF power transistor suggests its use in power amplifier stages. Further information regarding package type and mounting would be necessary for detailed design integration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF6G10LS-160RN is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is Unaffected.