MA4EX240L1-1225T
MACOM Technology Solutions
The MACOM MA4EX240L1-1225T is a silicon monolithic double balanced mixer designed for 1700-2500 MHz applications. It features a low cost miniature surface mount package.
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 1513+ | On Request | On Request |
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The NXP Semiconductors BLF6G10-45 is a 45W LDMOS power transistor specifically engineered for base station applications and multi-carrier operations within the 700 MHz to 1000 MHz frequency spectrum.
This transistor offers key performance characteristics such as a typical output power of 1.0 W, a gain of 22.5 dB, and an efficiency of 7.8% under specific 2-carrier W-CDMA conditions. It is designed for broadband operation and features internal matching for ease of use, along with integrated ESD protection and excellent ruggedness.
The BLF6G10-45 is housed in a flanged ceramic package (SOT608A) with two mounting holes and two leads, suitable for surface mount applications. Its robust design ensures excellent thermal stability, making it a reliable component for demanding RF power amplification tasks.
Key features include easy power control, excellent ruggedness, and high efficiency, contributing to its suitability for W-CDMA base stations and similar multi-carrier applications.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF6G10-45 operates from 700 MHz to 1000 MHz.
The average output power is 1.0 W under 2-carrier W-CDMA test conditions at 920-960 MHz, 28 V, 350 mA IDq.
The typical gain is 22.5 dB under the same test conditions.
The BLF6G10-45 is in a SOT608A flanged ceramic package with two leads and two mounting holes, designed for surface mount.
The transistor is rugged to a VSWR of 10:1 through all phases in class-AB operation at 28 V, 350 mA IDq, and 35 W CW output power at 960 MHz.
Maximum junction temperature is 225 °C, storage temperature range is −65 °C to +150 °C, and thermal resistance (junction to case) is 1.7 K/W at 80 °C case temperature.
The typical adjacent channel power ratio is −48.5 dBc under 2-carrier W-CDMA conditions.