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BLF647 The NXP Semiconductors BLF647 is an RF Power Transistor with a breakdown voltage of 65V and a maximum power of 200W. It is supplied in an SOT1121B package.
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BLF647

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF647 is an RF Power Transistor with a breakdown voltage of 65V and a maximum power of 200W. It is supplied in an SOT1121B package.
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$ Price Range: $0.99

BLF647 Available from 1 distributor

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BLF647 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Gain
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Power
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BLF647 Description

Short technical summary and product information.

The NXP Semiconductors BLF647 is a high-performance RF Power Transistor designed for demanding applications. It features a robust breakdown voltage of 65V and can handle up to 200W of power.

 

This transistor operates effectively at frequencies up to 1.4 GHz, making it suitable for various RF power amplification tasks. The BLF647 is capable of withstanding load mismatches up to VSWR 10:1 under specific conditions (VDS = 28V, f = 100 MHz at rated load power), ensuring reliability in challenging environments.

 

Packaged in the SOT1121B form factor, the BLF647 is designed for efficient thermal management and ease of integration into RF circuits. Its specifications make it a reliable choice for applications requiring high power RF output.

BLF647 Quick Information

Product Type: RF Power Transistor
Canonical Name: BLF647 RF Power Transistor
Subcategory: RF Power Transistor

BLF647 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF647 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF647 Features

  • 65V minimum breakdown voltage.
  • 200W maximum power handling.
  • Operates up to 1.4 GHz frequency.
  • Withstands VSWR 10:1 mismatch.
  • SOT1121B package for RF applications.

BLF647 Applications

  • Suitable for RF power amplification applications.
  • Used in high-frequency communication transmitters.
  • Ideal for broadband RF signal processing.
  • Applicable in RF power transistors for wireless systems.
  • Designed for load mismatch tolerance in RF circuits.

BLF647 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the BLF647?

The minimum breakdown voltage for the BLF647 is 65V.

What is the maximum power rating of the BLF647?

The BLF647 has a maximum power rating of 200W.

What is the operating frequency range of the BLF647?

The BLF647 operates at frequencies up to 1.4 GHz.

What is the package type for the BLF647?

The BLF647 is supplied in an SOT1121B package.

What is the RoHS status of the BLF647?

The BLF647 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BLF647?

The Moisture Sensitivity Level (MSL) for the BLF647 is 1 Unlimited.

What is the REACH status for the BLF647?

The BLF647 is REACH Unaffected.

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