BLF645,112 The Ampleon BLF645,112 is an RF Power Transistor designed for applications operating from 0 to 1.4 GHz. It offers a typical output power of 100 W and a gain of 18 dB.
Mfr Part #:

BLF645,112

Available from 1 distributors
Mfr Name: Flip Electronics Manufacturing Services
Flip Electronics Manufacturing Services
The Ampleon BLF645,112 is an RF Power Transistor designed for applications operating from 0 to 1.4 GHz. It offers a typical output power of 100 W and a gain of 18 dB.
✓ Total Stock: 78 pcs
$ Price Range: $0.99

BLF645,112 Available from 1 distributor

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✓ Non-Authorised
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78 pcs
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BLF645,112 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Gain
Output Power
Process
Supply Voltage
Type

BLF645,112 Description

Short technical summary and product information.

The Ampleon BLF645,112 is an RF Power Transistor utilizing LDMOS technology. It operates across a frequency range of 0 GHz to 1.4 GHz, delivering a nominal output power of 100 W with a typical gain of 18 dB. The transistor is designed for a supply voltage of 32 V and has a typical efficiency of 56% at a current draw of 9 mA.

 

This component is housed in a SOT540A package. Its specifications make it suitable for various RF power amplification applications where high frequency and power output are required. The LDMOS process technology ensures robust performance for demanding RF designs.

BLF645,112 Quick Information

Product Type: RF Power Transistor
Canonical Name: BLF645,112 RF Power Transistor
Subcategory: Bipolar (BJT) - Single

BLF645,112 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF645,112 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF645,112 Features

  • Operates from 0 to 1.4 GHz frequency range.
  • Delivers 100 W nominal output power.
  • Provides 18 dB typical power gain.
  • Designed for 32 V supply voltage.
  • Utilizes LDMOS process technology.

BLF645,112 Applications

  • Suitable for high-power RF amplification.
  • Ideal for broadband RF applications.
  • Used in communication systems.
  • Applicable in industrial RF heating.

BLF645,112 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating frequency range of the BLF645,112?

The BLF645,112 operates from 0 GHz to 1.4 GHz.

What is the output power of the BLF645,112?

The BLF645,112 has a nominal output power of 100 W.

What is the typical gain for the BLF645,112?

The typical gain for the BLF645,112 is 18 dB.

What is the supply voltage for the BLF645,112?

The BLF645,112 is designed for a supply voltage of 32 V.

What is the package type for the BLF645,112?

The BLF645,112 is supplied in a SOT540A package.

What is the typical efficiency of the BLF645,112?

The typical efficiency of the BLF645,112 is 56%.

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