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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | 1429+ | On Request | On Request |
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The NXP Semiconductors BLF578 is a high-power LDMOS transistor engineered for demanding broadcast and industrial applications within the HF to 500 MHz frequency band. This device delivers a typical output power of 1200 W with a power gain of 24 dB and an efficiency of 71% under pulsed RF conditions at 225 MHz.
Designed for broadband operation from 10 MHz to 500 MHz, the BLF578 offers features such as easy power control, integrated ESD protection, and excellent ruggedness and thermal stability. It is suitable for applications including industrial, scientific, and medical (ISM) applications, as well as broadcast transmitter systems.
The transistor is housed in a flanged balanced LDMOST ceramic package (SOT539A) suitable for surface mounting. It has a maximum drain-source voltage rating of 110 V and a maximum drain current of 88 A.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical pulsed output power at 225 MHz is 1200 W.
The typical power gain at 225 MHz is 24 dB.
The typical efficiency is 71% at 225 MHz.
The transistor is designed for broadband operation from 10 MHz to 500 MHz.
The maximum drain-source voltage is 110 V.
The typical gate-source threshold voltage is 1.7 V.
The package type is SOT539A.