| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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46 pcs
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46 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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The BLF548 from NXP Semiconductors is a silicon N-channel enhancement mode vertical D-MOS transistor specifically designed for communications transmitter applications within the UHF frequency range. It features a dual push-pull configuration, providing high power gain and easy power control, making it suitable for broadband operation.
Key electrical characteristics include a typical power gain of over 10 dB at 500 MHz with 28V drain-source voltage and 150W output power. The transistor also exhibits good thermal stability and is constructed with gold metallization for enhanced reliability. The device operates in CW, class-B mode, achieving a drain efficiency greater than 50% at 500 MHz.
Encapsulated in a 4-lead SOT262A2 balanced flange envelope with ceramic caps, the BLF548 utilizes the mounting flange for its common source connection. This package type facilitates efficient heat dissipation, crucial for high-power RF applications. Handling precautions for static discharge are noted, and the product contains beryllium oxide, requiring specific disposal procedures as chemical or special waste.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF548 delivers a minimum output power of 150 W at 500 MHz.
The minimum power gain is 10 dB at 500 MHz, 28 V, with 150 W output power under class-B conditions.
Minimum drain efficiency is 50% at 500 MHz, 28 V, with 150 W output power under class-B conditions.
The maximum drain-source voltage (VDS) is -65 V (absolute maximum rating).
The maximum total power dissipation is 330 W at 25 °C mounting base temperature.
The BLF548 is available in a SOT262A2 surface mount package.
Thermal resistance junction to mounting base is typically 0.5 K/W; mounting base to heatsink is typically 0.15 K/W.