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BLF547 The NXP Semiconductors BLF547 is an RF power transistor designed for high-frequency applications. It features a 65V breakdown voltage and 225W maximum power dissipation.
Mfr Part #:

BLF547

Available from 1 distributors
Mfr Name: Philips
Philips
The NXP Semiconductors BLF547 is an RF power transistor designed for high-frequency applications. It features a 65V breakdown voltage and 225W maximum power dissipation.
✓ Total Stock: 603 pcs
$ Price Range: $0.99

BLF547 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
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603 pcs
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603 pcs On Request 1 On Request On Request On Request On Request On Request
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BLF547 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Operating Temperature
Power Dissipation
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BLF547 Description

Short technical summary and product information.

The BLF547 from NXP Semiconductors is a high-performance RF power transistor. Encapsulated in a 4-lead SOT262A2 balanced flange envelope, it is suitable for demanding RF applications.

 

Key electrical specifications include a minimum drain-source resistance of 500mΩ and a breakdown voltage of 65V. The transistor can handle a maximum power dissipation of 225W and operates at temperatures up to 200°C.

 

The SOT262A2 package features a mounting flange that provides the common source connection, simplifying integration into RF circuits. This component is designed for robust performance in RF power amplification stages.

BLF547 Quick Information

Product Type: Transistor
Canonical Name: BLF547 Transistor
Subcategory: RF Power MOSFET

BLF547 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF547 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF547 Features

  • 65V breakdown voltage rating.
  • 225W maximum power dissipation.
  • Operates up to 200°C.
  • SOT262A2 balanced flange envelope.
  • Common source connection via mounting flange.

BLF547 Applications

  • Used in RF power amplifier circuits.
  • Suitable for high-temperature environments.
  • Ideal for wireless communication systems.
  • Applied in industrial RF heating.

BLF547 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the package type of the BLF547?

The BLF547 is housed in a SOT262A2 surface-mount package with 4 terminals.

What is the maximum operating temperature?

The maximum operating junction temperature is 200°C.

What is the breakdown voltage of the BLF547?

The breakdown voltage is 65V.

What is the maximum power dissipation?

The maximum power dissipation is 225W.

What is the drain-source resistance?

The drain-source resistance is 500 mΩ minimum.

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