BLF544

The NXP Semiconductors BLF544 is a UHF power MOS transistor designed for broadband operation, making it suitable for communication transmitters in the UHF frequency range. This N-channel enhancement mode vertical D-MOS power transistor is encapsulated in a 6-lead SOT171A flange package with a ceramic cap, and all leads are isolated from the flange.

Key features include high power gain, easy power control, and good thermal stability. Gold metallization ensures excellent reliability. The transistor is designed for common source class-B operation, demonstrating a power gain greater than 11 dB and drain efficiency over 50% at 500 MHz with 28V drain-source voltage and 20W output power. At 960 MHz under similar conditions, it offers a typical power gain of 7 dB and a typical drain efficiency of 50%.

Limiting values include a maximum drain-source voltage of 65V, a gate-source voltage of ±20V, and a continuous drain current of 3.5A. The total power dissipation is rated at 48W at 25°C mounting base temperature. Thermal resistance from junction to mounting base is 3.7 K/W, and from mounting base to heatsink is 0.4 K/W. Storage temperature ranges from -65°C to +150°C, with a maximum junction temperature of 200°C.

The BLF544 is supplied in anti-static packing to prevent damage from electrostatic discharge. It contains beryllium oxide and requires specific handling and disposal precautions as chemical or special waste.