| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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213 pcs
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213 pcs | On Request | 1 | On Request | On Request | 0940+ | On Request | On Request |
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| Manufacturer Name |
The BLF3G21-6 from NXP Semiconductors is a P-Channel RF transistor. It is designed for applications requiring robust performance in radio frequency circuits.
Key electrical specifications include a continuous drain current of 2.3 A and a drain-source breakdown voltage of 65 V. The gate-source breakdown voltage is rated at ±13 V, with a low on-resistance (Rds(on)) of 2.07 Ohms. This transistor operates effectively across a wide temperature range, from a minimum of -65 °C to a maximum of +200 °C.
Packaged in a CDIP SMT format, the BLF3G21-6 utilizes an SMD/SMT mounting style, making it suitable for surface-mount assembly processes. Its P-Channel polarity is a key characteristic for specific circuit designs.
Environmental compliance includes RoHS3 compliance, an MSL rating of 1 Unlimited, and REACH unaffected status. These attributes ensure suitability for various industrial and commercial applications where regulatory standards are important.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
65V
-65°C to +200°C
CDIP SMT
2.3A
2.07 Ohms
±13V