| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
151 pcs
|
151 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Number of Elements | |
| Operating Mode | |
| SVHC Present |
The Philips BLF369.112 is a high-performance RF Power MOSFET featuring an N-Channel configuration and enhancement mode operation. This device is specifically designed for amplifier applications within the Ultra High Frequency band.
Key technical specifications include two elements, a SILICON transistor element material, and METAL-OXIDE SEMICONDUCTOR FET technology. The case connection is SOURCE, and it utilizes a DUAL terminal position. The packaging is a FLANGE MOUNT style with a CERAMIC, METAL-SEALED COFIRED body material, described as ROHS COMPLIANT, CERAMIC PACKAGE-4. The terminal form is FLAT.
This component is suitable for various RF power amplification tasks. Its robust construction and specific electrical characteristics make it a reliable choice for demanding applications in the UHF spectrum.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF369.112 has an N-CHANNEL type.
The operating mode is ENHANCEMENT.
The transistor application is AMPLIFIER.
It operates in the ULTRA HIGH FREQUENCY BAND.
There are 2 elements.
The package style is FLANGE MOUNT.
The RoHS status is RoHS3 Compliant.