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BLF368 The NXP Semiconductors BLF368 is an RF Power MOSFET designed for amplifier applications. It features N-channel enhancement mode operation.
Mfr Part #:

BLF368

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF368 is an RF Power MOSFET designed for amplifier applications. It features N-channel enhancement mode operation.
✓ Total Stock: 46 pcs
$ Price Range: $0.99

BLF368 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
26 pcs
On Request
26 pcs On Request 1 On Request On Request 11+ On Request On Request
Fe Components ✓
Non-Authorised Inventory information
20 pcs
On Request
20 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BLF368 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Channel Type
Configuration
Mounting Type
Number of Elements
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Transistor Type
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BLF368 Description

Short technical summary and product information.

The NXP Semiconductors BLF368 is a 2-channel, RF Power MOSFET operating in the Very High Frequency band. It is constructed with Metal-Oxide Semiconductor technology and utilizes Silicon for its transistor element material.

 

This MOSFET has a minimum breakdown voltage of 65V and a maximum drain current (ID) of 25A. It operates in enhancement mode and is configured in a common source setup with two elements. The transistor application is specified as an amplifier.

 

The BLF368 comes in a ceramic FM-4 package with a flange mount style. It is a surface mount device with flat terminals. The component is RoHS3 compliant and REACH unaffected.

BLF368 Quick Information

Product Type: RF Power MOSFET
Canonical Name: NXP Semiconductors BLF368 RF Power MOSFET
Subcategory: RF Power MOSFET

BLF368 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BLF368 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF368 Features

  • 65V minimum breakdown voltage.
  • 25A maximum drain current.
  • N-channel enhancement mode operation.
  • Designed for RF power amplifier applications.
  • Surface mount FM-4 ceramic package.

BLF368 Applications

  • Used in RF power amplifier circuits
  • Suitable for high-frequency RF transmitters
  • Ideal for RF signal amplification
  • Designed for surface mount RF applications

BLF368 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the BLF368?

The minimum breakdown voltage is 65 V.

What is the maximum drain current for the BLF368?

The maximum drain current (ID) is 25 A.

What type of transistor is the BLF368?

The BLF368 is an RF Power MOSFET with N-channel enhancement mode.

What is the package style for the BLF368?

The BLF368 is supplied in a ceramic FM-4 package with a flange mount style.

Is the BLF368 RoHS compliant?

Yes, the BLF368 is RoHS3 Compliant.

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