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BLF246B

The NXP Semiconductors BLF246B is a VHF push-pull power MOS transistor designed for large signal applications. It offers high power gain and easy power control.

✓ Total Stock: 3,070 pcs

$ Price Range: $0.99

BLF246B Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	1,090 pcs On Request	1090 pcs	On Request	1	On Request	On Request	0819+/0711+/0713+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	990 pcs On Request	990 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	990 pcs On Request	990 pcs	On Request	1	On Request	On Request	0819+0711+0713+	On Request	On Request

BLF246B Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	NXP Semiconductors
Frequency	175 MHz
Mounting Type	Surface Mount
Storage Temperature	°C ~ °C
Tape & Reel	No

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BLF246B Description

Short technical summary and product information.

The NXP Semiconductors BLF246B is a silicon N-channel enhancement mode vertical D-MOS push-pull transistor. It is specifically designed for large signal applications within the VHF frequency range.

Key electrical characteristics include a drain-source voltage (VDS) of up to 65V and a maximum drain current (ID) of 8A. In a push-pull common source test circuit operating in CW, class-AB mode at 175 MHz, it delivers an output power (PL) of 60W with a power gain (Gp) greater than 14 dB and a drain efficiency (ηD) exceeding 55% at 28V VDS.

This transistor features gold metallization for excellent reliability and good thermal stability. It is encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap, and all leads are isolated from the flange. The product is supplied in anti-static packing.

Environmental and safety considerations are important. This product contains beryllium oxide and must be handled and disposed of as chemical or special waste according to regulations. It must never be thrown out with general or domestic waste.

BLF246B Quick Information

Product Type: RF Power Transistor

Canonical Name: BLF246B VHF push-pull power MOS transistor

Subcategory: RF Power Transistor

BLF246B Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BLF246B Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF246B Features

VHF push-pull power MOS transistor
60W output power at 175 MHz
High power gain (>14 dB)
Good thermal stability
SOT161A balanced flange package

BLF246B Applications

Suitable for VHF power amplification applications.
Used in RF transmitters and receivers.
Ideal for large signal RF applications.
Applicable in push-pull power amplifier circuits.

BLF246B FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the BLF246B?

The maximum drain-source voltage (VDS) is 65 V.

What is the maximum continuous drain current?

The maximum continuous drain current (ID) is 8 A.

What is the typical output power at 175 MHz?

The typical output power (PL) is 60 W at 175 MHz in CW, class-AB mode.

What is the power gain at 175 MHz?

The power gain (Gp) is greater than 14 dB at 175 MHz in CW, class-AB mode.

What is the drain efficiency at 175 MHz?

The drain efficiency (ηD) is greater than 55% at 175 MHz in CW, class-AB mode.

What is the package type for the BLF246B?

The BLF246B is encapsulated in an 8-lead SOT161A balanced flange package.

What is the storage temperature range?

The storage temperature (Tstg) ranges from -65 to +150 °C.