Mfr Part #:

BLF245B

The NXP Semiconductors BLF245B is a VHF push-pull power MOS transistor designed for large signal amplifier applications. It offers high power gain and good thermal stability.

✓ Total Stock: 25 pcs

$ Price Range: $0.99

BLF245B Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Fe Components ✓ Non-Authorised Inventory information	25 pcs On Request	25 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
HK XINYUANXIN ELECTRONIC TECH LIMITED ✓ Non-Authorised Inventory information	On Request On Request	On Request	On Request	1	On Request	On Request	On Request	On Request	On Request

BLF245B Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	NXP Semiconductors
Input Capacitance	60pF
Junction Temperature	200°C
Mounting Type	Surface Mount
Storage Temperature	-65 to +150°C

View Similar Products (0)

BLF245B Description

Short technical summary and product information.

The NXP Semiconductors BLF245B is a silicon N-channel enhancement mode vertical D-MOS transistor. It is specifically designed for large signal amplifier applications within the VHF frequency range. This dual push-pull transistor features high power gain, easy power control, and good thermal stability, making it suitable for demanding applications.

The BLF245B is encapsulated in a 4-lead SOT279A balanced flange package with a ceramic cap. The mounting flange serves as the common source connection for the transistors. Key electrical characteristics include a drain-source breakdown voltage of 65V, a gate-source threshold voltage between 2V and 4.5V, and a forward transconductance typically ranging from 600 to 850 mS. The device can handle a total power dissipation of up to 75W at 25°C mounting base temperature.

This transistor is constructed with gold metallization, ensuring excellent reliability. It is designed for push-pull common source amplifier circuits. RF performance data indicates a power gain greater than 14dB and an efficiency greater than 55% at 175MHz with 30W of power output at 28V drain-source voltage.

BLF245B Quick Information

Product Type: MOSFET Transistor

Canonical Name: BLF245B VHF push-pull power MOS transistor

Subcategory: Power

BLF245B Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BLF245B Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF245B Features

High power gain for amplifiers.
Easy power control capabilities.
Good thermal stability.
Gold metallization for reliability.
Designed for VHF frequency range.

BLF245B Applications

Used in RF signal amplification
Suitable for high-voltage switching circuits
Ideal for power supply regulation
Applied in high-current switching applications

BLF245B FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage for the BLF245B?

The drain-source breakdown voltage is a minimum of 65V.

What is the typical forward transconductance of the BLF245B?

The typical forward transconductance is between 600 and 850 mS.

What is the maximum power dissipation for the BLF245B?

The total power dissipation is a maximum of 75W.

What is the storage temperature range for the BLF245B?

The storage temperature range is from -65°C to +150°C.

What package is the BLF245B supplied in?

The BLF245B is supplied in a 4-lead SOT279A balanced flange package.