| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,391 pcs
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1391 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Philips BLF244 is an N-channel RF Power MOSFET utilizing Metal-Oxide Semiconductor FET technology. It is specifically designed for amplifier applications within the S-band frequency range, operating from 2.3GHz to 2.4GHz.
This component features a minimum breakdown voltage of 65V and a maximum drain current of 28A. It provides a typical gain of 18dB and an output power of 20W. The MOSFET is constructed with silicon for the transistor element and has a ceramic, metal-sealed cofired package body material.
The BLF244 comes in a rectangular SOT-502A package with a flat terminal form. The standard package quantity is 100 units, supplied on tape and reel. Its configuration is single, and it is classified as RoHS3 Compliant with a Moisture Sensitivity Level of 1 (Unlimited).
This RF Power MOSFET is suitable for various RF applications requiring high power amplification and stable performance within its specified frequency range.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current (ID) for the BLF244 is 28A.
The minimum breakdown voltage (DS Breakdown Voltage-Min) for the BLF244 is 65V.
The BLF244 operates in the frequency range of 2.3GHz to 2.4GHz.
The typical gain for the BLF244 is 18dB.
The BLF244 has an output power rating of 20W.
The BLF244 is an LDMOS RF Power MOSFET with an N-channel type.
The BLF244 is supplied in a SOT-502A package.