| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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54 pcs
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54 pcs | On Request | 1 | On Request | On Request | 1242+ | On Request | On Request |
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The BLF2425M7LS250P is an RF power LDMOS transistor manufactured by NXP Semiconductors. It delivers a maximum continuous wave (CW) output power of 250W at 2450MHz, operating with a drain-source voltage of 28V and a quiescent current of 20mA.
This device is designed for high-power RF applications requiring robust performance. It can withstand a load mismatch of up to 10:1 VSWR, providing reliability in demanding environments. The transistor is housed in an SMD package, suitable for surface-mount assembly.
Key specifications include a drain-source voltage rating of 65V, a nominal operating frequency of 2450MHz, and a quiescent current of 20mA. The part is listed as RoHS3 Compliant, REACH Unaffected, and has an MSL of 1 Unlimited, though these compliance claims are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF2425M7LS250P delivers a maximum continuous wave (CW) output power of 250W at 2450MHz with a 28V drain supply.
The nominal operating frequency is 2450MHz.
The drain-source voltage rating is 65V.
The package type is SMD.
The quiescent current is 20mA at 28V drain-source voltage.
It can withstand a load mismatch of up to 10:1 VSWR.