| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
92 pcs
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92 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The BLF242 from NXP Semiconductors is a high-performance RF Power Transistor designed for demanding applications. It is encapsulated in a 4-lead SOT-123 flange envelope with a ceramic cap, ensuring robust performance.
Key electrical specifications include a minimum breakdown voltage of 65V and a maximum operating temperature of 225°C. The transistor operates within the 2.4 to 2.5 GHz frequency range, delivering 250W of power with a gain of 13 dB at 28V.
Proper handling is advised, as the gate-source input must be protected against static charge during transport and handling. This component is suitable for various RF power amplification applications where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 65V.
The maximum operating temperature is 225°C.
The BLF242 is encapsulated in a SOT-123 flange envelope.
The BLF242 is RoHS3 Compliant.
The MSL is 1 Unlimited.