| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
416 pcs
|
416 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Approval Agency | |
| Efficiency | |
| Frequency Range | |
| Gain | |
| Input Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Output Power | |
| Storage Temperature |
The Philips BLF2045 is a 30W LDMOS power transistor specifically designed for RF power amplifiers in base station applications, covering the frequency range of 1800 to 2200 MHz. It is suitable for GSM, EDGE, CDMA, and W-CDMA base stations and multicarrier applications.
Key electrical characteristics include a typical output power of 30W PEP, a gain of 12.5 dB, and an efficiency of 32% at a supply voltage of 26V and quiescent current of 500 mA. The transistor is designed for broadband operation with no internal matching required, simplifying power control and offering excellent ruggedness and thermal stability.
Packaged in a SOT467C surface-mount package, the BLF2045 is intended for applications requiring robust RF power amplification. Its design facilitates easy power control and provides excellent thermal stability, making it a reliable choice for demanding base station environments.
This transistor operates within specific voltage and current limits, including a maximum drain-source voltage of 65V and a maximum drain current of 4.5A. The junction temperature is rated up to 200°C, with a thermal resistance from junction to heatsink of 2.1 K/W under specified RF operating conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power (PEP) for the BLF2045 transistor is 30 W.
The BLF2045 transistor is designed for broadband operation in the 1800 to 2200 MHz frequency range.
The typical gain for the BLF2045 transistor is 12.5 dB.
The typical efficiency for the BLF2045 transistor is 32%.
The BLF2045 transistor is supplied in a SOT467C plastic surface mounted package.