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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BLF188XRU is a high-power LDMOS transistor manufactured by Ampleon, designed for RF power applications in the HF to 600 MHz frequency range. It delivers 1400W output power under CW conditions at 27 MHz with 50V drain-source voltage, achieving 73% efficiency. The device features integrated ESD protection and excellent ruggedness.
The transistor operates with a typical gain of 23.7 dB at 27 MHz and 26.5 dB at 108 MHz. Maximum drain-source voltage is 135V, and gate-source voltage range is -6V to +11V. The quiescent current is typically 40 mA. The device has a dual common-source configuration.
The junction temperature is rated up to 225°C, with storage temperature range from -65°C to +150°C. Thermal resistance junction-to-case is 0.10 K/W typ. The device is housed in a SOT-539A flanged ceramic package with 2 mounting holes and 4 leads, designed for chassis mount.
This transistor is suitable for industrial, scientific, medical, and broadcast transmitter applications. It is designed for broadband operation and offers high efficiency and excellent thermal stability.
| Qty | Low | High |
|---|---|---|
| 1+ | $174.38 | $174.38 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical operating drain-source voltage is 50 V, with a maximum rating of 135 V.
The BLF188XRU is available in a SOT-539A flanged balanced ceramic package with 2 mounting holes and 4 leads.
The junction temperature can reach up to 225°C. The storage temperature range is -65°C to +150°C.
The device is listed as RoHS3 compliant, but the datasheet references Directive 2002/95/EC (RoHS1). Compliance status requires verification with the manufacturer.
Typical output power is 1400 W at 27 MHz under CW conditions at 50 V, and 1200 W at 108 MHz.
The typical gain at 108 MHz is 26.5 dB with 83% efficiency, under CW conditions at 50 V.
The device is designed for broadband operation from HF to 600 MHz.