| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
314 pcs
|
314 pcs | On Request | 1 | On Request | On Request | 03+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Output Power | |
| SVHC Present | |
| Technology | |
| Voltage |
The BLF1820E-90 from Philips is a high-power RF MOSFET utilizing LDMOS technology. This transistor is engineered for radio frequency amplification applications, particularly in broadcast transmitters requiring high performance and efficiency.
Key electrical specifications include an output power capability of 1400W at 108MHz, a gain of 28dB, and operation at a test voltage of 50V. The device is designed with a dual MOSFET configuration in a common source topology.
Packaged in a SOT539A case, the BLF1820E-90 is designed for chassis mounting to facilitate heat dissipation. Its LDMOS technology ensures high linearity and stable operation, making it suitable for continuous high-power applications in industrial, commercial, and broadcast communication infrastructures.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF1820E-90 provides 1400W output power at 108MHz.
The gain is 28dB at 108MHz.
The device is specified for operation at 108MHz.
It uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
It is a dual MOSFET configuration in common source topology.
The rated voltage is 110V.
It comes in a SOT539A package with chassis mount.