BLF178P,112 The NXP Semiconductors BLF178P,112 is an RF Power Transistor designed for high-power applications. It offers a frequency range up to 108MHz and a significant power output.
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BLF178P,112

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BLF178P,112 is an RF Power Transistor designed for high-power applications. It offers a frequency range up to 108MHz and a significant power output.
✓ Total Stock: 39 pcs
$ Price Range: $0.99

BLF178P,112 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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39 pcs
39 pcs On Request 1 On Request On Request 1529+ On Request On Request

BLF178P,112 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BLF178P,112 Description

Short technical summary and product information.

The BLF178P,112 from NXP Semiconductors is a Power LDMOS transistor designed for RF power applications. It operates within a frequency range of 0.01 to 0.1 GHz and can deliver up to 1200W of power with a gain of 26 dB.

 

Key electrical specifications include a breakdown voltage of 110V (minimum 50V) and a current rating of 88A, with a test current of 40mA. The transistor is built for demanding thermal conditions, with an operating temperature range from -65°C to 225°C.

 

Packaged in an SOT-539A case, this component features a screw mount type, making it suitable for robust mounting solutions. The BLF178P,112 is identified as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status.

BLF178P,112 Quick Information

Product Type: RF Power Transistor
Canonical Name: BLF178P,112 RF Power Transistor
Subcategory: LDMOS Transistor

BLF178P,112 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLF178P,112 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLF178P,112 Features

  • Power LDMOS transistor for RF applications.
  • 1200W power output capability.
  • Operates up to 108MHz frequency.
  • High breakdown voltage of 110V.
  • Wide operating temperature range.

BLF178P,112 Applications

  • Suitable for high-power RF amplifiers.
  • Used in broadcast transmitters.
  • Applicable in industrial RF heating.
  • Designed for communication systems.

BLF178P,112 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the power output of the BLF178P,112 transistor?

The BLF178P,112 transistor has a power output of 1200 W.

What is the operating frequency of the BLF178P,112?

The BLF178P,112 operates at a frequency of 108 MHz.

What is the breakdown voltage for the BLF178P,112?

The breakdown voltage for the BLF178P,112 is 110 V.

What is the minimum breakdown voltage specified for the BLF178P,112?

The minimum breakdown voltage specified for the BLF178P,112 is 50 V.

What is the current rating of the BLF178P,112 transistor?

The current rating of the BLF178P,112 transistor is 88 A.

What is the maximum operating temperature for the BLF178P,112?

The maximum operating temperature for the BLF178P,112 is 225°C.

What is the minimum operating temperature for the BLF178P,112?

The minimum operating temperature for the BLF178P,112 is -65°C.

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