| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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39 pcs
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39 pcs | On Request | 1 | On Request | On Request | 1529+ | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present |
The BLF178P,112 from NXP Semiconductors is a Power LDMOS transistor designed for RF power applications. It operates within a frequency range of 0.01 to 0.1 GHz and can deliver up to 1200W of power with a gain of 26 dB.
Key electrical specifications include a breakdown voltage of 110V (minimum 50V) and a current rating of 88A, with a test current of 40mA. The transistor is built for demanding thermal conditions, with an operating temperature range from -65°C to 225°C.
Packaged in an SOT-539A case, this component features a screw mount type, making it suitable for robust mounting solutions. The BLF178P,112 is identified as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF178P,112 transistor has a power output of 1200 W.
The BLF178P,112 operates at a frequency of 108 MHz.
The breakdown voltage for the BLF178P,112 is 110 V.
The minimum breakdown voltage specified for the BLF178P,112 is 50 V.
The current rating of the BLF178P,112 transistor is 88 A.
The maximum operating temperature for the BLF178P,112 is 225°C.
The minimum operating temperature for the BLF178P,112 is -65°C.