| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
460 pcs
|
460 pcs | On Request | 1 | On Request | On Request | 0821+ | On Request | On Request | |
|
360 pcs
|
360 pcs | On Request | 1 | On Request | On Request | 0821+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature |
The BLF177CR is a Silicon N-channel enhancement mode vertical D-MOS transistor manufactured by NXP Semiconductors. It is rated for a maximum drain-source voltage of 125V and a continuous drain current of 16A. The transistor is encapsulated in a SOT121B flanged package with a ceramic cap, and all leads are isolated from the flange.
Designed for industrial and military applications, the BLF177CR operates within the HF/VHF frequency range. Key features include high power gain, low intermodulation distortion, easy power control, good thermal stability, and the ability to withstand full load mismatch. Its absolute maximum ratings include a junction temperature of 200°C and a storage temperature range of -65°C to +150°C.
This component is suitable for applications requiring robust RF power handling. The SOT121B package is designed for efficient heat dissipation, crucial for high-power RF transistors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 125V.
The maximum continuous drain current is 16A.
The BLF177CR is supplied in a SOT121B package.
The BLF177CR is designed for the HF/VHF frequency range.
The maximum junction temperature is 200°C.