| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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690 pcs
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690 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request | |
|
590 pcs
|
590 pcs | On Request | 1 | On Request | On Request | 0846+ | On Request | On Request |
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The BLF177C is a Silicon N-channel enhancement mode vertical D-MOS transistor manufactured by NXP Semiconductors. It is encapsulated in a 4-lead, SOT121B flanged package with a ceramic cap, where all leads are isolated from the flange.
This RF power transistor is rated for a maximum drain-source voltage of 125V and a continuous DC drain current of 16A. It can handle a total power dissipation of 220W at 25℃. The operating frequency range is specified as HF/VHF.
The BLF177C is designed for industrial and military applications. Key features include high power gain, low intermodulation distortion, easy power control, good thermal stability, and the ability to withstand full load mismatch.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 125V.
The maximum DC drain current is 16A.
The maximum total power dissipation is 220W at a mounting base temperature of 25°C.
The maximum junction temperature is 200°C.
The BLF177C is available in a flanged SOT121B package.
The BLF177C is an N-channel enhancement mode vertical D-MOS transistor.
The BLF177C is designed for HF/VHF frequency ranges.