| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The BLF145 from NXP Semiconductors is a silicon N-channel enhancement mode vertical D-MOS transistor specifically engineered for SSB transmitter applications within the HF frequency range.
This transistor boasts high power gain, a low noise figure, and good thermal stability, making it suitable for demanding RF applications. It is designed to withstand full load mismatch conditions.
Encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap, all leads are isolated from the flange. The device is intended for surface mount applications.
Key electrical characteristics include a drain-source breakdown voltage of 65V and a maximum gate-source voltage of ±20V. It can handle a DC drain current of up to 6A and a total power dissipation of 68W at 25°C mounting base temperature. Thermal resistance from junction to mounting base is 2.6 K/W.
Performance data indicates a minimum power gain of >24 dB in SSB class-A operation at 28 MHz, with third harmonic distortion typically below -40 dB. Efficiency figures are also provided for class-A and class-AB operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 65 V.
The maximum gate-source voltage is ±20 V.
The maximum DC drain current is 6 A.
The total power dissipation is 68 W up to a mounting base temperature of 25 °C.
The BLF145 is supplied in a 4-lead SOT123 flange envelope.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.