| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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70 pcs
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70 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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The BLF10M6200 is a high-power LDMOS transistor manufactured by NXP Semiconductors, offering a nominal power output of 200W. This component is specifically targeted for Industrial, Scientific, and Medical (ISM) applications, operating efficiently within the frequency range of 700 to 1000MHz.
Key electrical characteristics include a typical drain efficiency of 28.5% and a gain of 20dB. The transistor operates from a 28V supply, drawing a current of 1400mA. It is designed for ruggedness and can withstand a load mismatch of 10:1 across all phases. The device features internal ESD protection for enhanced reliability and is designed for class-AB operation.
This LDMOS power transistor is suitable for applications requiring robust performance in the specified frequency bands. Its internal matching simplifies integration into designs, while its ability to handle load mismatches contributes to system stability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BLF10M6200 transistor offers a nominal power output of 200W.
The BLF10M6200 is targeted for ISM applications from 700 to 1000MHz.
The BLF10M6200 offers a typical drain efficiency of 28.5%.
The BLF10M6200 draws current from a 28V supply.
This Ampleon transistor draws 1400mA of current from a 28V supply.
The BLF10M6200 is capable of withstanding a load mismatch of 10:1 through all phases.
Yes, Ampleon designers integrate internal ESD protection for enhanced reliability.