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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP BLD6G22L-50,112 is an LDMOS RF transistor designed for high-frequency power amplification. It delivers 8W output power with 14dB gain at 2.14GHz, making it suitable for wireless infrastructure applications such as base station power amplifiers. The device operates at a drain-source voltage of 28V and draws 170 mA drain current. It features a dual common source configuration, which provides design flexibility for balanced amplifier stages. The transistor is housed in a SOT-1130A package (CDFM4 supplier package) and is chassis mountable, enabling efficient thermal management in high-power designs.
The drain-source voltage is 28 V.
It is available in a SOT-1130A package (CDFM4 supplier device package) with chassis mount.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and low confidence.
The gain is 14 dB.
The output power is 8 W.
The frequency is 2.14 GHz.
The configuration is dual, common source.