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BLA6H0912LS-1000U The Ampleon USA Inc. BLA6H0912LS-1000U is an RF FET LDMOS transistor designed for high-power applications. It features a 100V rating and 15.5dB gain.
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BLA6H0912LS-1000U

Available from 1 distributors
Mfr Name: Flip Electronics Manufacturing Services
Flip Electronics Manufacturing Services
The Ampleon USA Inc. BLA6H0912LS-1000U is an RF FET LDMOS transistor designed for high-power applications. It features a 100V rating and 15.5dB gain.
✓ Total Stock: 390 pcs
$ Price Range: $165.89

BLA6H0912LS-1000U Available from 1 distributor

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✓ Non-Authorised
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390 pcs
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BLA6H0912LS-1000U Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BLA6H0912LS-1000U Description

Short technical summary and product information.

The BLA6H0912LS-1000U from Ampleon USA Inc. is a high-performance RF FET LDMOS transistor. It is rated for a voltage of 100V and provides a gain of 15.5dB.

 

This device is capable of delivering an output power of 1000W and operates with a test voltage of 50V. The transistor type is LDMOS (Dual), Common Source, making it suitable for demanding RF applications.

 

The component comes in a SOT539B package and is supplied in a tube. It has a test current rating of 200mA.

 

This RF FET LDMOS is designed for applications requiring robust performance and high power handling capabilities in the RF spectrum.

BLA6H0912LS-1000U Quick Information

Product Type: RF FET LDMOS
Canonical Name: BLA6H0912LS-1000U RF FET LDMOS 100V 15.5dB SOT539B
Subcategory: Transistors-Fets-Mosfets-Rf

BLA6H0912LS-1000U Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLA6H0912LS-1000U Estimated Pricing

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1+ $165.89 $165.89

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLA6H0912LS-1000U Features

  • 100V rated voltage for high power applications.
  • 15.5dB gain for signal amplification.
  • 1000W output power capability.
  • LDMOS (Dual), Common Source transistor type.
  • SOT539B package for RF applications.

BLA6H0912LS-1000U Applications

  • Suitable for RF power amplification applications.
  • Used in high-frequency communication transmitters.
  • Ideal for RF transceiver modules and systems.
  • Applicable in radar and satellite communication equipment.

BLA6H0912LS-1000U FAQs

5 frequently asked questions generated from this part’s specifications.
What is the rated voltage for the BLA6H0912LS-1000U?

The rated voltage for the BLA6H0912LS-1000U is 100V.

What is the output power of the BLA6H0912LS-1000U?

The output power of the BLA6H0912LS-1000U is 1000W.

What is the gain of the BLA6H0912LS-1000U?

The gain of the BLA6H0912LS-1000U is 15.5dB.

What type of transistor is the BLA6H0912LS-1000U?

The BLA6H0912LS-1000U is an LDMOS (Dual), Common Source transistor.

What package does the BLA6H0912LS-1000U come in?

The BLA6H0912LS-1000U comes in a SOT539B package.

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