BLA6G1011-200R,112 The Ampleon BLA6G1011-200R,112 is an RF Power Transistor operating from 1.03 to 1.09 GHz. It features 200W output power and 20 dB gain.
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BLA6G1011-200R,112

Available from 1 distributors
Mfr Name: Flip Electronics Manufacturing Services
Flip Electronics Manufacturing Services
The Ampleon BLA6G1011-200R,112 is an RF Power Transistor operating from 1.03 to 1.09 GHz. It features 200W output power and 20 dB gain.
✓ Total Stock: 264 pcs
$ Price Range: $1.00

BLA6G1011-200R,112 Available from 1 distributor

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BLA6G1011-200R,112 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Efficiency
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Supply Voltage
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BLA6G1011-200R,112 Description

Short technical summary and product information.

The Ampleon BLA6G1011-200R,112 is a high-performance RF Power Transistor designed for demanding applications. It operates within a frequency range of 1.03 GHz to 1.09 GHz, delivering a substantial output power of 200W.

 

Key electrical characteristics include a gain of 20 dB and a typical efficiency of 65%. The transistor is designed to operate with a supply voltage of 28V and has an Id rating of 100 mA. It utilizes an LDMOS process technology, known for its suitability in high-frequency power applications.

 

This RF Power Transistor is housed in a SOT-502A package, facilitating integration into various electronic designs. Its robust specifications make it suitable for applications requiring reliable high-power RF amplification.

BLA6G1011-200R,112 Quick Information

Product Type: RF Power Transistor
Canonical Name: Ampleon BLA6G1011-200R,112 RF Power Transistor
Subcategory: RF Power Discrete Transistors

BLA6G1011-200R,112 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BLA6G1011-200R,112 Estimated Pricing

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1+ $1.00 $1.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

BLA6G1011-200R,112 Features

  • Operates from 1.03 to 1.09 GHz.
  • Delivers 200W of output power.
  • Provides 20 dB of signal gain.
  • Designed for 28V supply voltage.
  • Utilizes LDMOS process technology.

BLA6G1011-200R,112 Applications

  • Suitable for high-power RF amplification.
  • Ideal for 1 GHz frequency band applications.
  • Used in demanding RF systems.
  • Requires 28V power supply.

BLA6G1011-200R,112 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the frequency range of the BLA6G1011-200R,112?

The frequency range is from 1.03 GHz to 1.09 GHz.

What is the maximum output power of this transistor?

The maximum output power is 200 W.

What package does the BLA6G1011-200R,112 come in?

It is packaged in a SOT-502A case.

What is the gain of this RF power transistor?

The gain is 20 dB.

What is the efficiency of the BLA6G1011-200R,112?

The typical efficiency is 65%.

What process technology is used in this transistor?

It uses LDMOS process technology.

What is the supply voltage requirement?

It requires a supply voltage of 28 V.

BLA6G1011-200R,112 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
BLA6G1011L-200RG,1
BLA6G1011L-200RG,1
Flip Electronics Manufacturing Services
The Ampleon BLA6G1011L-200RG,1 is an RF Power Transistor designed for avionics applications. It operates within a frequency range of 1.03 to 1.09 GHz.
View Part
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