| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
80,000 pcs
|
80000 pcs | On Request | 1 | On Request | On Request | 21+20+ | On Request | On Request |
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The BGU8H1X is a SiGe:C Low Noise Amplifier MMIC manufactured by NXP Semiconductors, suitable for LTE applications. This component operates within a frequency range of 2.3GHz to 2.7GHz, offering a gain of 13dB and a P1dB of -3dBm. Its noise figure is a low 0.9dB, making it ideal for sensitive RF front-ends.
The device is designed for surface mounting and comes in a compact 6-XSON package with dimensions of 1.1x0.7mm. It operates with a supply voltage ranging from 1.5V to 3.1V and consumes a typical operating current of 5mA. The maximum power dissipation is rated at 55mW. The operating temperature range for this MMIC is from -40°C to 85°C.
This amplifier is packaged in tape and reel for automated assembly processes. Its RoHS 3 compliance indicates adherence to environmental standards for hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BGU8H1X has a gain of 13dB.
The noise figure of the BGU8H1X is 0.9dB.
The BGU8H1X operates within a voltage range of 1.5V to 3.1V.
The BGU8H1X can operate in temperatures from -40°C to 85°C.
The BGU8H1X is available in a 6-XFDFN package, specifically a 6-XSON with dimensions of 1.1x0.7mm.
Yes, the BGU8H1X is RoHS 3 compliant.