| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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420 pcs
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420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BGU7258X from NXP Semiconductors is a high-performance, fully integrated MMIC Low Noise Amplifier (LNA) suitable for wireless receiver applications operating within the 5 GHz to 6 GHz ISM band. Manufactured using NXP's SiGe:C technology, this LNA provides excellent gain, noise figure, linearity, and efficiency. It features a robust temperature-compensated internal bias network and an integral bypass/shutdown function. The device operates from a single supply voltage of 3.0 V to 3.6 V and consumes a typical current of 13 mA in gain mode, with a low bypass current of 1 µA. The BGU7258X boasts a low noise figure of 1.6 dB and a typical power gain of 14 dB at 5.1 GHz. Its compact 1.6 mm x 1.6 mm footprint, requiring only two external components, makes it ideal for space-sensitive applications. The LNA is housed in a 6-HXSON (1.6x1.6) package with surface mount termination.
Key features include integrated DC blocking at RF input and output, a concurrent 2.4 GHz notch filter, and high ESD protection of 2 kV (HBM) on all pins. The BGU7258X is designed for applications such as IEEE 802.11a/n/ac WiFi/WLAN, smartphones, tablets, access points, routers, and general-purpose ISM applications. It is compliant with RoHS3 directives and has an MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BGU7258X operates from a 3.0 V to 3.6 V single supply.
The typical noise figure for the BGU7258X in gain mode is 1.6 dB.
The typical current consumption in gain mode is 13 mA.
The BGU7258X is supplied in a 6-HXSON (1.6x1.6) package.
Yes, the BGU7258X is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) for the BGU7258X is 1.