| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,515 pcs
|
3515 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Infineon Technologies BGA7M1N6 is a Silicon Germanium Low Noise Amplifier. This component is categorized under RF Amplifiers, suitable for various radio frequency applications.
Key specifications include its designation as a Low Noise Amplifier and its construction using Silicon Germanium technology. Further details regarding operating voltage, temperature, gain, and noise figure are typically found in the manufacturer's datasheet.
This part is manufactured by Infineon Technologies AG. While specific packaging and mounting details are not provided in the extracted data, it is generally used in RF circuits requiring signal amplification with low noise characteristics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BGA7M1N6 is a Low Noise Amplifier.
The BGA7M1N6 uses Silicon Germanium technology.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.