| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,000 pcs
|
25000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Infineon Technologies BGA7H1N6 is a Silicon Germanium Low Noise Amplifier designed for LTE applications. This component is housed in a BGA-7H1N6 package, suitable for surface-mount designs.
Key specifications include RoHS3 compliance, a Moisture Sensitivity Level (MSL) of 1, and REACH unaffected status. These attributes make it a reliable choice for various electronic designs requiring RF amplification.
This amplifier is part of Infineon's RF and Protection Devices portfolio, indicating its suitability for demanding radio frequency applications. Its design focuses on providing low noise amplification, crucial for maintaining signal integrity in communication systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The BGA7H1N6 is RoHS3 Compliant.
The MSL for the BGA7H1N6 is Level 1.
The BGA7H1N6 is REACH Unaffected.
The BGA7H1N6 is supplied in a BGA-7H1N6 package.
