BGA5H1BN6E6327XTSA1

The Infineon Technologies BGA5H1BN6E6327XTSA1 is a high-gain, low-noise amplifier (LNA) specifically designed for LTE highband applications. Operating within the 2300 - 2690 MHz frequency range, this component provides an insertion power gain of 18.1 dB and a remarkably low noise figure of 0.7 dB, crucial for maintaining high data rates even at cell edges.

This LNA features multi-state control, allowing for both high gain and bypass modes. The bypass mode offers an insertion loss of 5.2 dB and helps reduce current consumption, which is typically 8.5 mA. The device operates over a supply voltage range of 1.5 V to 3.6 V and its RF output is internally matched to 50 Ohms, simplifying external component count.

The BGA5H1BN6E6327XTSA1 is housed in an ultra-small TSNP-6-10 leadless package, measuring 0.7 x 1.1 mm, making it suitable for space-constrained designs. It is qualified for industrial applications according to JEDEC standards and utilizes Infineon's B9HF Silicon Germanium technology. The component is also Pb-free and RoHS compliant.

This amplifier is ideal for enhancing LTE data rates by improving the RF front-end's performance. Its integrated bypass function adds flexibility and increases the overall system dynamic range.