| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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339 pcs
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339 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The NXP Semiconductors BGA2817,115 is a Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier designed for general-purpose applications from DC to 2.2 GHz. It features internal matching to 50 ohms, providing a typical gain of 24.4 dB at 2150 MHz and an output power at 1 dB gain compression of 5 dBm at 2150 MHz.
This amplifier operates with a supply voltage between 3.0V and 3.6V, drawing a typical supply current of 20.0 mA. It boasts good linearity with low second and third-order products, and a noise figure of 3.9 dB at 950 MHz. The device is unconditionally stable (K > 1) and requires no output inductor.
Packaged in a 6-pin SOT363 (also referred to as 6-TSSOP, SC-88) plastic SMD package, the BGA2817,115 is designed for surface mounting. Its applications include LNB IF amplifiers and general-purpose low-noise wideband amplification.
Key electrical characteristics include a typical gain of 25.1dB, a P1dB of 5dBm, and a noise figure of 3.8dB. The device offers reverse isolation greater than 39 dB up to 2150 MHz and input/output return loss figures suitable for 50-ohm systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage for the BGA2817,115 is between 3.0V and 3.6V, with a typical value of 3.3V.
The BGA2817,115 is available in a 6-TSSOP, SC-88, SOT-363 package.
The typical gain of the BGA2817,115 RF amplifier is 25.1 dB.
The output power at 1 dB gain compression for the BGA2817,115 is 5 dBm.
The noise figure of the BGA2817,115 is 3.8 dB.
The frequency range of the BGA2817,115 is from 0Hz to 2.2GHz.