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BG 3230 E6327 Dual N-channel MOSFET tetrode for RF applications. Features 8V drain-source voltage, 25mA continuous drain current, and 800MHz frequency with low noise figure.
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BG 3230 E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-channel MOSFET tetrode for RF applications. Features 8V drain-source voltage, 25mA continuous drain current, and 800MHz frequency with low noise figure.
✓ Total Stock: 54,000 pcs

BG 3230 E6327 Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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54,000 pcs
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54000 pcs On Request 1 On Request On Request 0317+ On Request On Request
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BG 3230 E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current Rating (Amps)
Frequency
Gain
Mounting Type
Noise Figure
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Voltage
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BG 3230 E6327 Description

Short technical summary and product information.

The BG 3230 E6327 from Infineon Technologies is a dual N-channel MOSFET tetrode designed for low noise gain controlled input stages of UHF and VHF tuners with 5V supply voltage. It integrates two AGC amplifiers in a single package with a stabilized bias network and gate protection diodes. Key electrical characteristics include a drain-source breakdown voltage of 12V (minimum), continuous drain current of 25mA, and total power dissipation of 200mW. The device offers high gain (24dB at 800MHz) and low noise figure (1.3dB at 800MHz), with a gain control range of 45dB minimum. It is housed in a 6-VSSOP, SC-88, SOT-363 surface mount package (PG-SOT363-PO). The operating voltage is 5V, and the storage temperature range is -55°C to 150°C. This component is suitable for RF amplifier stages requiring AGC capability.

BG 3230 E6327 Quick Information

Product Type: RF MOSFET
Series: BG3230
Canonical Name: Infineon Technologies BG3230E6327 Dual N-Channel MOSFET Tetrode
Subcategory: Dual N-Channel MOSFET Tetrode

BG 3230 E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected

BG 3230 E6327 Features

  • Dual N-channel MOSFET tetrode design.
  • Low noise figure of 1.3 dB at 800 MHz.
  • High gain of 24 dB at 800 MHz.
  • Integrated bias network and gate protection diodes.
  • Surface mount SOT-363 package.

BG 3230 E6327 Applications

  • Ideal for UHF and VHF tuner input stages.
  • Used in AGC amplifier circuits.
  • Suitable for low-noise RF amplifiers.
  • Designed for 5V supply voltage systems.

BG 3230 E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of the BG 3230 E6327?

The operating voltage is 5V.

What package is the BG 3230 E6327 available in?

It is available in 6-VSSOP, SC-88, SOT-363 (PG-SOT363-PO) surface mount package.

Is the BG 3230 E6327 RoHS compliant?

RoHS3 compliant (unverified).

What is the noise figure of the BG 3230 E6327 at 800MHz?

The typical noise figure is 1.3 dB at 800MHz.

What is the power gain at 800MHz?

The typical power gain is 24 dB at 800MHz.

What is the maximum continuous drain current?

The maximum continuous drain current is 25 mA.

What frequency range is the BG 3230 E6327 designed for?

It is tested at 800MHz and 45MHz, suitable for UHF and VHF applications.

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