| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The BFY56 is an NPN Transistor from manufacturer ME, designed for various electronic applications. It features a maximum collector current of 1A and a maximum power dissipation of 800mW. The device can operate at a maximum temperature of 175°C.
This transistor falls under the category of Discrete Semiconductor Products, specifically within the Transistors - Bipolar (BJT) - Single, Pre-Biased subcategory. Its specifications make it suitable for general-purpose amplification and switching tasks where these electrical and thermal parameters are critical.
Further details regarding its package type, mounting, and specific electrical characteristics would typically be found in the datasheet, which is not currently linked.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BFY56 transistor is 1A.
The maximum power dissipation of the BFY56 transistor is 800mW.
The maximum operating temperature for the BFY56 transistor is 175°C.
The RoHS status of the BFY56 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BFY56 transistor is 1 Unlimited.
The REACH status for the BFY56 transistor is REACH Unaffected.