| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics BFY51 is a silicon planar epitaxial NPN transistor housed in a TO-39 metal case. It is designed for general-purpose linear and switching applications.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 30V and a maximum collector current (IC) of 1A. The device offers a maximum power dissipation (Pd) of 0.8W at an ambient temperature of 25°C, and 5W at a case temperature of 25°C. The DC current gain (hFE) varies with collector current and VCE, with minimum values ranging from 15 to 30.
Thermal properties include a junction-to-case thermal resistance of 35°C/W. The operating junction temperature can reach up to 200°C, with storage temperatures ranging from -65°C to 200°C.
This transistor is suitable for various industrial applications requiring medium power amplification and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BFY51 transistor is 30V.
The maximum continuous collector current (IC) for the BFY51 is 1A.
The BFY51 transistor is supplied in a TO-39 metal case.
The maximum power dissipation (Ptot) for the BFY51 at an ambient temperature of 25°C is 0.8W.
The RoHS status of the BFY51 transistor is RoHS3 Compliant.