BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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368 pcs
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368 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The BFY51 is a silicon planar epitaxial NPN transistor manufactured by FRD, housed in a TO-39 metal case. It is designed for general-purpose linear and switching applications.
Key electrical characteristics include a maximum collector current of 1A and a collector-emitter breakdown voltage (VCEO) of 35V for the BFY51 variant. The maximum collector-base voltage (VCBO) is 80V. It offers a DC current gain (hFE) ranging from 15 to 40 depending on the operating conditions.
Thermal specifications include a total power dissipation of 0.8W at ambient temperature and 5W at case temperature, with a junction-to-case thermal resistance of 35°C/W. The maximum operating junction temperature is 200°C.
This transistor is suitable for various industrial applications requiring medium power amplification and switching capabilities.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BFY51 transistor is 1A.
The collector-emitter breakdown voltage (VCEO) for the BFY51 is 30V.
The BFY51 transistor is supplied in a TO-39 metal case.
The maximum power dissipation of the BFY51 at 25°C case temperature is 5W.
The minimum DC current gain (hFE) of the BFY51 at IC=150mA and VCE=10V is 15.
The transition frequency (fT) for the BFY51 is 50MHz at IC=50mA and VCE=10V.