BFX34 The BFX34 is a silicon NPN epitaxial planar transistor in a TO-39 metal case. It features a maximum collector-emitter voltage of 60V and collector current of 5A.
Mfr Part #:

BFX34

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The BFX34 is a silicon NPN epitaxial planar transistor in a TO-39 metal case. It features a maximum collector-emitter voltage of 60V and collector current of 5A.
Total Stock: 1,472 pcs
$ Price Range: $1.00

BFX34 Available from 2 distributors

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1,414 pcs
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58 pcs
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BFX34 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector Cut-Off Current
Collector-Base Breakdown Voltage
Collector-Base Capacitance
Collector-Base Voltage (VCBO)
Collector-Emitter Sustaining Voltage
Current
DC Current Gain (Minimum @ IC = 1 A, VCE = 2 V)
DC Current Gain (Typical @ IC = 1.5 A, VCE = 0.6 V)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cut-off Current
Emitter-Base Breakdown Voltage
Emitter-Base Capacitance
Emitter-Base Voltage (VEBO)
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ Tcase ≤ 25 °C)
Storage Temperature
Supplier Device Package
Transistor Type
Turn On Time
Vce Saturation (Max) @ Ib, Ic
Voltage

BFX34 Description

Short technical summary and product information.

The BFX34 is a silicon NPN epitaxial planar transistor manufactured by STMicroelectronics, housed in a Jedec TO-39 metal case. It is designed for high current applications requiring low saturation voltage and high speed. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60V, collector-base voltage (VCBO) of 120V, and emitter-base voltage (VEBO) of 6V. The continuous collector current is rated at 5A, with a total power dissipation of 5W at case temperature ≤25°C and 870mW at ambient temperature ≤25°C. The DC current gain (hFE) is typically 100 at IC=1.5A and VCE=0.6V, with a minimum of 40 at IC=2A and VCE=2V. The collector-emitter saturation voltage is typically 0.4V and maximum 1V at IC=5A and IB=0.5A. The transition frequency (fT) is typically 100MHz at IC=0.5A and VCE=5V. The device also features low collector-base capacitance (100pF max) and fast switching times (turn-on and turn-off times typically 0.25µs and 0.6µs respectively). The BFX34 is suitable for power drivers, power amplifiers, switching power supplies, and relay drivers. It operates over a storage temperature range of -65°C to 200°C with a maximum junction temperature of 200°C.

BFX34 Quick Information

Product Type: Bipolar (BJT) Single Transistor
Canonical Name: BFX34 NPN Bipolar Transistor
Subcategory: Single Bipolar Transistor

BFX34 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: No

BFX34 Estimated Pricing

Qty Low High
800+ $1.00 $1.00

Estimated market price range - modelled values for guidance only, not live distributor offers.

BFX34 Features

  • NPN silicon epitaxial planar transistor.
  • Maximum collector current of 5A.
  • Collector-emitter voltage rating of 60V.
  • Low saturation voltage (1V max at 5A).
  • TO-39 metal case package.

BFX34 Applications

  • Ideal for power driver and amplifier stages.
  • Used in switching power supply circuits.
  • Suitable for relay and solenoid drivers.
  • Applicable in inverter and converter designs.

BFX34 FAQs

7 frequently asked questions generated from this part’s specifications.
What are the maximum voltage ratings for the BFX34?

Maximum collector-emitter voltage (VCEO) is 60V, collector-base voltage (VCBO) is 120V, and emitter-base voltage (VEBO) is 6V.

What is the package type of the BFX34?

The BFX34 is housed in a Jedec TO-39 metal case.

What is the operating temperature range for the BFX34?

The storage temperature range is -65°C to 200°C, and the maximum junction temperature is 200°C.

What is the DC current gain (hFE) of the BFX34?

At IC=1A and VCE=2V, hFE is minimum 40; at IC=1.5A and VCE=0.6V, typical 100; at IC=2A and VCE=2V, range 40-150.

What is the collector-emitter saturation voltage of the BFX34?

Maximum VCE(sat) is 1V at IC=5A and IB=0.5A, typical 0.4V.

What is the transition frequency of the BFX34?

The transition frequency (fT) is typically 100MHz at IC=0.5A and VCE=5V.

What is the power dissipation rating of the BFX34?

Maximum power dissipation is 5W at case temperature ≤25°C and 870mW at ambient temperature ≤25°C.

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