| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The BFW17A is a silicon planar epitaxial NPN transistor housed in a TO-39 metal case. It is designed for final and driver stages in channel- and band-aerial amplifiers, offering high output power from 40 to 860 MHz. This transistor also finds application as the final stage of wide band vertical amplifiers in high-speed oscilloscopes.
Key electrical specifications include a maximum Collector Emitter Voltage of 25V and a maximum Collector Current of 150mA. The device offers a typical DC Current Gain of 130 at 50mA and a transition frequency of 1.2GHz. Power dissipation is rated at 0.7W at 25°C ambient and 1.5W at 125°C case temperature.
The TO-39 package is suitable for through-hole mounting. Thermal resistance from junction to case is 50°C/W, and junction to ambient is 250°C/W. Storage and junction temperatures range from -65°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.13 | $2.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector Emitter Voltage (VCEO) for the BFW17A is 25V.
The BFW17A transistor has a maximum Collector Current (Ic) of 150mA.
The typical DC Current Gain (hFE) for the BFW17A is 130 at Ic=50mA and VCE=5V.
The typical transition frequency (fT) of the BFW17A is 1.2GHz.
The BFW17A transistor is supplied in a TO-39 metal case package.
The maximum power dissipation for the BFW17A at 125°C case temperature is 1.5W.