| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
63 pcs
|
63 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Noise Figure | |
| Output Power |
The BFW17A is a silicon planar epitaxial NPN transistor manufactured by SESCOCEM, housed in a TO-39 metal case. It is designed for high output power applications in channel and band-aerial amplifiers, operating from 40 to 860 MHz. This transistor is also suitable for use as the final stage of wideband vertical amplifiers in high-speed oscilloscopes.
Key electrical specifications include a maximum Collector-Emitter Voltage of 25V, a maximum Collector Current of 150mA, and a maximum Collector Peak Current of 300mA. The device offers a maximum power dissipation of 0.7W at 25°C ambient temperature and 1.5W at 125°C case temperature. The junction-to-case thermal resistance is 50°C/W.
Electrical characteristics include a DC Current Gain (hFE) typically around 130 at 50mA and 5V, and 70 at 150mA and 5V. The transition frequency (fT) is a minimum of 1.2 GHz at 150mA and 15V. Capacitance values include Collector-base Capacitance (Ccbo) of 4pF maximum and Reverse Capacitance (Cre) of 6pF maximum.
The BFW17A is mounted via through-hole method in a TO-39 package. It is specified with a RoHS3 Compliant status, MSL 1 Unlimited, and REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Collector-Emitter Voltage (Vce) for the BFW17A is 25V.
The BFW17A transistor has a maximum Collector Current (Ic) of 150mA.
The maximum power dissipation for the BFW17A at 125°C case temperature is 1.5W.
The BFW17A transistor comes in a TO-39 metal case package.
The BFW17A is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BFW17A is 1 Unlimited.