| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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270,000 pcs
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270000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFU790F,115 from NXP Semiconductors is an NPN silicon germanium (SiGe) RF bipolar junction transistor designed for high-speed, low-noise applications. It is housed in a plastic 4-pin dual-emitter SOT-343F package and intended for surface-mount assembly. The device combines low noise figure with high linearity, making it suitable for receiver front-end and driver stages in wireless systems.
Key electrical characteristics include a maximum collector-emitter voltage of 2.8V, maximum collector-base voltage of 10V, maximum emitter-base voltage of 1.0V, and maximum collector current of 100mA. DC current gain ranges from 235 minimum to 585 maximum, with 410 typical at Ic=10mA and Vce=2V. Transition frequency is typically 25GHz at Ic=100mA and Vce=1V. Typical noise figure is 0.4dB at 1.8GHz, and typical output power at 1dB gain compression is 20dBm at 1.8GHz.
The transistor provides a typical output third-order intercept point of 33dBm and a typical maximum power gain of 19.5dB, supporting medium output power and high linearity applications. It is suitable for Wi-Fi/WLAN/WiMAX, ZigBee, LTE, cellular, and UMTS systems. Maximum total power dissipation is 234mW, with a maximum junction temperature of 150°C.
The device is supplied in a surface-mount SOT-343F package with supplier device code 4-DFP. It is sensitive to electrostatic discharge and requires standard ESD handling precautions during assembly and use.
The typical transition frequency is 25GHz, measured at Ic=100mA, Vce=1V, f=2GHz, and Tamb=25°C.
The typical noise figure is 0.4dB, measured at Ic=20mA, Vce=2V, f=1.8GHz, and Tamb=25°C.
The maximum collector-emitter voltage is 2.8V, maximum collector-base voltage is 10V, and maximum emitter-base voltage is 1.0V.
It is supplied in a surface-mount SOT-343F package with supplier device code 4-DFP.
The maximum junction temperature is 150°C.
The product is listed as RoHS3 compliant, though this status has not been independently verified.
It is designed for high linearity and medium output power applications including Wi-Fi/WLAN/WiMAX, ZigBee, LTE, cellular, and UMTS systems.