BFU768F,115

The BFU768F,115 is an NPN silicon germanium (SiGe) wideband RF transistor from NXP Semiconductors. It is intended for high-speed, low-noise applications and comes in a 4-pin dual-emitter SOT-343F plastic surface-mount package.

Key electrical specifications include a maximum collector-emitter breakdown voltage of 2.8 V, collector-base breakdown voltage of 10 V, and emitter-base breakdown voltage of 1.0 V. Maximum collector current is 70 mA and power dissipation is 220 mW. The transistor offers a minimum DC current gain of 155 at 10 mA and 2 V, and a typical transition frequency of 110 GHz. Typical insertion power gain is 13.1 dB at 2.4 GHz, 12.2 dB at 5.0 GHz, and 11.1 dB at 5.9 GHz. Typical noise figure is 1.1 dB at 2.4 GHz and 5.0 GHz, and 1.2 dB at 5.9 GHz; minimum noise figure is 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz. Typical third-order intercept point is 15.7 dBm at 2.4 GHz and 18.8 dBm at 5.0 and 5.9 GHz.

The device is suited to high-linearity and medium-output-power RF applications such as Wi-Fi/WLAN, WiMAX, and ZigBee. NXP reference LNA circuits for the 2.4 GHz ISM band and 4.9 GHz to 5.9 GHz U-NII band draw 10.8 mA from a 2.1 V supply. The component is rated for a maximum junction temperature of 150 °C and is sensitive to electrostatic discharge; handling precautions per ANSI/ESD S20.20 or equivalent are required.

The SOT-343F package is a compact surface-mount design with four leads. The dual-emitter configuration aids RF grounding and layout. The part's high fT and low noise make it suitable for front-end and driver stages in wireless systems.