| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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90 pcs
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90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFU730F,115 is an NPN silicon germanium microwave transistor from NXP Semiconductors, designed for high-speed, low-noise applications. It offers a transition frequency of 55GHz and a typical noise figure of 0.8dB at 5.8GHz, making it suitable for demanding RF front-end designs.
Key electrical characteristics include a maximum collector-emitter voltage of 2.8V, collector-base voltage of 10V, and emitter-base voltage of 1.0V. The device supports a maximum collector current of 30mA and dissipates up to 197mW at a solder point temperature of 90°C. DC current gain ranges from 205 to 555 at 2mA collector current and 2V collector-emitter voltage.
The transistor delivers a maximum power gain of 18.5dB at 5.8GHz and 12.5dB at 12GHz, with an output power at 1dB compression of 12.5dBm. It is housed in a 4-pin SOT-343F surface-mount package with dual emitters, suitable for compact RF circuit layouts.
Typical applications include low-noise amplifiers for microwave communications, DBS LNB stages, Wi-Fi/WLAN, GPS, Bluetooth, and other wireless systems. The device is ESD sensitive and requires appropriate handling precautions.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.26 | $0.26 |
| 6,000+ | $0.24 | $0.24 |
| 9,000+ | $0.23 | $0.23 |
| 15,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 2.8V with open base.
The typical transition frequency (fT) is 55GHz, measured at Ic=25mA, Vce=2V, f=2GHz.
The typical noise figure is 0.8dB at 5.8GHz and 1.3dB at 12GHz.
The BFU730F,115 is available in a 4-pin SOT-343F surface-mount package (supplier device package 4-DFP).
The maximum operating junction temperature is 150°C.
The BFU730F,115 is marked as RoHS3 compliant, though this is unverified from the source document.