Mfr Part #:

BFU725F/N1,115

NPN silicon germanium RF transistor with 55 GHz transition frequency and 0.7 dB typical noise figure. Housed in a surface-mount SOT-343 package.

✓ Total Stock: 3,000 pcs

BFU725F/N1,115 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	3,000 pcs On Request	3000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BFU725F/N1,115 Description

Short technical summary and product information.

BFU725F/N1,115 is an NPN silicon germanium microwave transistor from NXP Semiconductors designed for high-speed, low-noise applications. It provides a typical transition frequency of 55 GHz and a maximum collector current of 40 mA, with total power dissipation of 136 mW. The device offers a typical noise figure of 0.7 dB at 5.8 GHz and a maximum power gain of 18 dB at 5.8 GHz or 27 dB at 1.8 GHz.

The DC current gain ranges from 160 to 400, and the collector-base capacitance is 70 fF. The transistor is supplied in a plastic, 4-pin dual-emitter SOT-343 reverse pinning package suitable for surface-mount assembly. It is intended for applications such as second-stage LNAs and mixers in DBS LNB systems, satellite radios, low-noise amplifiers for microwave communications, WLAN and CDMA equipment, and Ka-band dielectric resonator oscillators. The device is ESD sensitive and requires careful handling during assembly.

The absolute maximum ratings include a collector-emitter voltage of 2.8 V, collector-base voltage of 10 V, and emitter-base voltage of 1 V, with maximum junction temperature of 150°C.

BFU725F/N1,115 Quick Information

Product Type: RF Bipolar Junction Transistor

Series: BFU725F

Canonical Name: NPN Silicon Germanium RF Transistor

Subcategory: RF Bipolar Junction Transistor

BFU725F/N1,115 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

BFU725F/N1,115 Features

NPN silicon germanium RF transistor.
Typical 55 GHz transition frequency.
Low noise figure of 0.7 dB.
Offered in SOT-343 reverse pinning package.
160 to 400 DC current gain range.

BFU725F/N1,115 Applications

Second LNA and mixer in DBS LNB.
Low-noise amplifiers for microwave communications systems.
WLAN and CDMA application circuits.
Used for Ka-band dielectric resonator oscillators.

BFU725F/N1,115 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage of the BFU725F/N1,115?

The maximum collector-emitter voltage (VCEO) is 2.8 V with the base open.

What package is the BFU725F/N1,115 available in?

It is offered in a surface-mount SOT-343 reverse pinning package (supplier device package 4-SO).

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

Is the BFU725F/N1,115 RoHS compliant?

The existing database lists it as RoHS3 compliant.

What is the transition frequency of the BFU725F/N1,115?

The typical transition frequency is 55 GHz at Ic=25mA, Vce=2V, f=2GHz, Tamb=25°C.

What is the noise figure of this transistor?

Typical noise figure is 0.7 dB at 5.8 GHz; the range from 1.5 GHz to 12 GHz is 0.42 dB to 1.1 dB.

What are the collector current and power dissipation ratings?

Maximum collector current is 40 mA and total power dissipation is 136 mW (Tsp ≤ 90°C).

Category	Transistors - Bipolar (BJT) - RF
Manufacturer Name	NXP Semiconductors
Current	40 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	160 min, 280 typ, 400 max
Frequency	55 GHz
Gain	10 dB ~ 24 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	0.42 dB ~ 1.1 dB
Operating Temperature	150°C (TJ)
Power	136 mW
Storage Temperature	-65°C ~ 150°C
Supplier Device Package	4-SO
Transistor Type	NPN
Voltage	2.8 V