| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,568 pcs
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1568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFU725F/N1 from NXP Semiconductors is an NPN silicon germanium microwave transistor engineered for high-speed and low-noise performance. It is housed in a compact 4-pin SOT343F plastic package.
Key electrical characteristics include a transition frequency (fT) of 55 GHz and a maximum power gain (Gp(max)) of 18 dB at 5.8 GHz. The device exhibits a low noise figure (NF) of 0.7 dB at 5.8 GHz, making it suitable for sensitive RF applications. It operates with a collector current up to 40 mA and has a maximum power dissipation of 136 mW.
This RF transistor is designed for applications such as the 2nd LNA stage and mixer stage in DBS LNBs, satellite radio, low noise amplifiers for microwave communication systems, WLAN, CDMA, and Ka band oscillators. Its high gain and low noise characteristics are beneficial in demanding RF designs.
The transistor is sensitive to ElectroStatic Discharge (ESD) and requires appropriate handling precautions as per industry standards like ANSI/ESD S20.20.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.29 | $9.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) is 55 GHz.
The noise figure (NF) is 0.7 dB at 5.8 GHz.
The total power dissipation (Ptot) is 136 mW.
The BFU725F/N1 is supplied in a SOT-343 package.
The operating temperature is 150°C (TJ).