| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,685 pcs
|
1685 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BFU725F from NXP Semiconductors is an NPN bipolar junction transistor (BJT) specifically designed for RF applications. It boasts a high transition frequency of 55GHz, making it suitable for high-speed circuits.
Key electrical characteristics include a maximum collector current of 40mA and a maximum power dissipation of 136mW. The DC current gain (hFE) is a minimum of 160 at 10mA and 2V. The noise figure ranges from 0.42dB to 1.1dB across frequencies from 1.5GHz to 12GHz.
This transistor operates at temperatures up to 150°C (TJ). It is housed in a compact SOT-343 surface-mount package, identified as 4-SO by the supplier. The reverse pinning configuration is noted.
Compliance information indicates ROHS3 compliance, REACH unaffected status, and Moisture Sensitivity Level 1 (Unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The transition frequency (fT) is 55GHz.
The gain range is 10dB to 24dB.
The maximum collector current is 40mA.
The BFU725F is available in a SOT-343 surface mount package with a 4-SO supplier device package.
The maximum junction temperature is 150°C.
The typical noise figure is 0.42dB to 1.1dB across 1.5GHz to 12GHz.
The minimum DC current gain (hFE) is 160 at 10mA collector current and 2V collector-emitter voltage.