| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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72,000 pcs
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72000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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BFU710F,115 is an NPN wideband silicon germanium RF transistor from NXP Semiconductors, housed in a 4-pin SOT-343F surface-mount package. It is designed for high-speed, low-noise microwave applications, including DBS LNBs, LNA and mixer stages, Ka-band oscillators, driver/buffer circuits, and low-current battery-operated equipment such as GPS, RKE, AMR, ZigBee, FM radio, mobile TV, and Bluetooth systems.
The transistor features a typical transition frequency of 43 GHz, a maximum power gain of 14 dB at 12 GHz, and a typical noise figure of 1.45 dB at 12 GHz. Maximum ratings include a collector-emitter voltage of 2.8 V, collector-base voltage of 10 V, emitter-base voltage of 1.0 V, collector current of 10 mA, and total power dissipation of 136 mW. DC current gain ranges from 200 to 550 at Ic=1mA and Vce=2V. Typical collector-base capacitance is 21 fF.
The device is ESD sensitive and should be handled with appropriate precautions. Maximum junction temperature is 150°C. This component is surface mountable and is supplied in an SOT-343F (4-DFP) package.
The maximum collector-emitter voltage (VCEO) is 2.8 V with the base open.
The BFU710F,115 is available in a SOT-343F surface-mount package with 4 pins (supplier device package 4-DFP).
The maximum junction operating temperature is 150°C.
The BFU710F,115 is listed as RoHS3 compliant.
The typical transition frequency is 43 GHz at Ic=9mA, Vce=2V, f=2GHz.
Typical noise figure is 1.45 dB at 12 GHz; across 5.8 to 12 GHz it ranges from 0.85 dB to 1.45 dB.
The DC current gain ranges from 200 minimum to 550 maximum (375 typical) at Ic=1mA, Vce=2V.