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BFU690F,115 NXP BFU690F is an NPN silicon RF transistor for high-speed, low-noise applications. Key specs: 18GHz transition frequency, 5.5V Vceo, 100mA Ic, and 490mW max power dissipation. Surface-mount SOT-343F package.
Mfr Part #:

BFU690F,115

Available from 2 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
NXP BFU690F is an NPN silicon RF transistor for high-speed, low-noise applications. Key specs: 18GHz transition frequency, 5.5V Vceo, 100mA Ic, and 490mW max power dissipation. Surface-mount SOT-343F package.
✓ Total Stock: 4,800 pcs

BFU690F,115 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Seba Components ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,800 pcs
On Request
1800 pcs On Request 1 On Request On Request On Request On Request On Request
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BFU690F,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Termination Style
Transistor Type
Voltage
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BFU690F,115 Description

Short technical summary and product information.

The NXP BFU690F is an NPN wideband silicon RF transistor designed for high-speed, low-noise applications. It features a maximum collector-emitter voltage of 5.5V, a collector current of 100mA, and a total power dissipation of 490mW. The device offers a typical transition frequency (fT) of 18GHz and a DC current gain (hFE) ranging from 90 to 180. Noise figure is typically 0.65dB at 1.8GHz, and the maximum power gain (Gp(max)) is 20.5dB typical under specified conditions. The output power at 1dB compression (P1dB) is 22dBm typical. The transistor comes in a 4-lead SOT-343F flat-pack surface-mount package (supplier device package 4-DFP). It is suitable for applications such as Ka-band oscillators, C-band buffer amplifiers, ZigBee, LTE, cellular, and UMTS. RoHS3 compliant (unverified).

BFU690F,115 Quick Information

Product Type: RF Bipolar Junction Transistor
Canonical Name: NXP BFU690F NPN wideband silicon RF transistor
Subcategory: NPN Wideband Silicon

BFU690F,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BFU690F,115 Features

  • 18GHz typical transition frequency (fT).
  • 5.5V maximum collector-emitter voltage (Vceo).
  • 490mW maximum power dissipation (Ptot).
  • Low noise figure: 0.65dB typical at 1.8GHz.
  • Surface-mount SOT-343F (4-DFP) package.

BFU690F,115 Applications

  • Ka-band oscillators and DRO circuits.
  • C-band high output buffer amplifiers.
  • ZigBee wireless communication modules.
  • LTE, cellular, and UMTS infrastructure.

BFU690F,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of the BFU690F?

The maximum Vceo is 5.5V.

What is the transition frequency (fT) of the BFU690F?

The typical transition frequency fT is 18GHz at Ic=60mA, Vce=1V.

What package is the BFU690F available in?

The BFU690F is packaged in a SOT-343F (4-DFP) surface-mount flat-pack.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

Is the BFU690F RoHS compliant?

RoHS3 compliance is indicated but unverified.

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