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BFU660F,115 BFU660F is an NPN wideband silicon RF transistor from NXP, offering low noise and high linearity. It features 21GHz transition frequency, 5.5V VCEO, and 60mA collector current in a SOT-343F package.
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BFU660F,115

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
BFU660F is an NPN wideband silicon RF transistor from NXP, offering low noise and high linearity. It features 21GHz transition frequency, 5.5V VCEO, and 60mA collector current in a SOT-343F package.
✓ Total Stock: 495 pcs

BFU660F,115 Available from 1 distributor

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BFU660F,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Mounting Type
Noise Figure (dB Typ @ f)
Operating Temperature
Power
Storage Temperature
Supplier Device Package
Termination Style
Transistor Type
Voltage
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BFU660F,115 Description

Short technical summary and product information.

BFU660F is an NPN wideband silicon RF transistor from NXP Semiconductors, designed for high speed and low noise applications. It comes in a surface-mount SOT-343F package (4-DFP) and operates at junction temperatures up to 150°C. The device offers a collector-emitter breakdown voltage of 5.5V, a collector current of 60mA, and a power dissipation of 225mW.

 

Key electrical characteristics include a transition frequency of 21GHz, a typical noise figure of 0.65dB at 1.8GHz, and a maximum power gain of 24dB. It achieves an output third-order intercept point of 28dBm and a 1dB compression point of 17dBm, making it suitable for high-linearity RF stages.

 

Typical applications include analog and digital cordless phones, ZigBee, SDARS second-stage LNA, LTE and cellular RF front-ends, and X-band high-output buffer amplifiers. The device is ESD sensitive and requires appropriate handling precautions.

BFU660F,115 Quick Information

Product Type: RF Bipolar Transistor
Canonical Name: BFU660F NPN Wideband RF Transistor
Subcategory: Wideband RF Transistor

BFU660F,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BFU660F,115 Features

  • NPN wideband silicon RF transistor.
  • Low noise figure of 0.65dB typical.
  • 21GHz transition frequency for high speed.
  • Surface mount SOT-343F package.
  • High linearity with 28dBm IP3.

BFU660F,115 Applications

  • Used in analog and digital cordless phones.
  • Suitable for ZigBee and wireless modules.
  • Ideal for LTE and cellular RF stages.
  • Works as X-band high output buffer amplifier.
  • Used in SDARS second stage LNA.

BFU660F,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of BFU660F?

5.5V (VCEO).

What package is BFU660F available in?

SOT-343F surface-mount package (4-DFP).

What is the maximum operating junction temperature?

150°C (TJ).

Is BFU660F RoHS compliant?

Reportedly RoHS3 compliant, but unverified.

What is the transition frequency of BFU660F?

21GHz typical.

What is the typical noise figure?

0.65dB at 1.8GHz.

What is the maximum collector current?

60mA.

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